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Lam at ALD/ALE 2020 Virtual Meeting

June 15, 2020

The 20th International Conference on Atomic Layer Deposition (ALD 2020) featuring the 7th International Atomic Layer Etching Workshop (ALE 2020) will take place Monday, June 29–Wednesday, July 1, 2020. This annual meeting focuses on the science and technology of atomic scale processes, which are essential in advanced chipmaking. The virtual meeting format will include live daily presentations, as well as on demand (recorded) sessions.

Lam is pleased to support research and industry learning in ALD and ALE through our gold sponsorship. Several of our technologists will be serving as moderators, including Dennis Hausmann, Adrien LaVoie, and Thorsten Lill.

You can hear about some of the latest advances from Lam and our collaborators at the following presentations.

ALD Conference

Blocking Precursor Adsorption During ALD of Al2O3 Using Small Inhibitor Molecules: The Influence of Precursor Chemistry
Marc Merkx‚ Athanasios Angelidis‚ Jun Li (Eindhoven University of Technology‚ Netherlands); Dennis Hausmann (Lam Research); Erwin Kessels‚ Adrie Mackus (Eindhoven University of Technology‚ Netherlands)
Tuesday, June 30, 3:00 PM-3:15 PM

Effect of Copper Surface Condition on Passivation Characteristics for Applications to Area Selective Atomic Layer Deposition
Su Min Hwang (University of Texas at Dallas); Harrison Kim‚ Jin-Hyun Kim (The University of Texas at Dallas); Yong Chan Jung (University of Texas at Dallas); Luis Fabian Pena‚ Kui Tan‚ Jean-Francois Veyan (The University of Texas at Dallas); Dan Alvarez‚ Jeffrey Spiegelman (RASIRC); Kashish Sharma‚ Paul Lemaire‚ Dennis Hausmann (Lam Research); Jiyoung Kim (University of Texas at Dallas)
Tuesday, June 30, 3:15 PM-3:30 PM

ALE Workshop

(Invited) The Flip Side of the Story: Atomic Layer Etching
Keren Kanarik (Lam Research)
Monday, June 29, 12:00 PM-12:30 PM

Aspect-Ratio Dependence of Isotropic Thermal ALE and Mitigation Thereof
Andreas Fischer‚ Aaron Routzahn‚ Thorsten Lill (Lam Research)
Tuesday, June 30, 9:30 AM-9:45 AM

GaN Damage Evaluation After Conventional Plasma Etching and Anisotropic Atomic Layer Etching
Simon Ruel‚ Patricia Pimenta-Barros (CEA-Leti‚ France); Nicolas Chauvet (Lam Research); Frédéric Le Roux (CEA-Leti‚ France); Samantha Tan, François Gaucher (Lam Research); Nicolas Posseme (CEA-Leti‚ France)
Tuesday, June 30, 10:00 AM-10:30 AM

Strategies to Enhance the Etch Selectivity During Plasma‑Assisted Atomic‑Scale Etching of SiO2 over SiNx
Ryan Gasvoda (Colorado School of Mines); Zhonghao Zhang‚ Eric Hudson (Lam Research); Sumit Agarwal (Colorado School of Mines)
Tuesday, June 30, 1:45 PM-2:00 PM

Complete schedules and registration information can be found on the ALD/ALE 2020 website.

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