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Every Atom Matters at These Conferences

Experts in the atomic-scale processing community will soon assemble at the AVS ALD 2015 Conference and the ALE Workshop to share advances in fundamental understanding and discuss recent progress in thin film device applications. Atomic layer deposition (ALD) and atomic layer etching (ALE) can provide chipmakers with advanced capabilities and process control that enable next-generation device manufacturing. As a leading provider of atomic-scale deposition and etch capabilities, Lam Research is pleased to be a platinum sponsor of both these AVS-hosted events. We will also share some of our work, as highlighted below.



One of the most important conferences on ALD, the International Conference on Atomic Layer Deposition, will take place this year June 28-July 1 in Portland, Oregon. Lam’s Dr. Adrien LaVoie will give an invited talk on ALD in high-volume manufacturing. Additionally, there will be four oral presentations and four poster presentations featuring work by Lam.

(Invited) ALD for High Volume Manufacturing: Latest Trends, Developments, and Market Applications
A. LaVoie
Monday, June 29, 3:00 PM

Plasma Effects on Conformality for Atomic Layer Deposition of Silicon Nitride
K. Kelchner, S. Tang, G. Yuan, D. Hausmann, J. Henri, J. Sims
Monday, June 29, 5:15 PM

Computational Modelling of Atomic Layer Deposition of Silicon Carbide
E. Filatova, S. Elliott (Tyndall National Institute); D. Hausmann (Lam Research)
Monday, June 29, 5:30 poster session

Towards Atomic Layer Deposition of Carbon-Containing Silicon-Based Dielectrics
R.A. Ovanesyan, R.J. Gasvoda (Colorado School of Mines); D.M. Hausmann (Lam Research); S. Agarwal (Colorado School of Mines)
Tuesday, June 30, 3:15 PM

Atomic Layer Deposition of Titanium Nitride Thin Film Using Unsymmetrical Dimethyl Hydrazine
S.V. Thombare, I. Karim, S. Gopinath
Tuesday, June 30, 5:30 PM poster session

Precursor and Process Effects on Conformality for Atomic Layer Deposition of Silicon Nitride Using Nitrogen (N2) Plasma
S. Tang, K. Kelchner, G. Yuan, D. Hausmann, J. Henri, J. Sims
Tuesday, June 30, 5:30 PM poster session

Wafer-Scale Selective Deposition of Nanometer Metal Oxide Features Via Selective Saturated Vapor Infiltration into Pre-Patterned Poly(Methyl Methacrylate) Template
E. Dandley (North Carolina State University); A. Yoon, Z. Zhu, L. Sheet (Lam Research); G. Parsons (North Carolina State University)
Wednesday, July 1, 8:15 AM

Plasma Enhanced Atomic Layer Deposition of SiO2 in Sub-Saturation Regime
P. Kumar, H. Kang, J. Qian, A. LaVoie
Wednesday, July 1, 8:30 AM




In recognition of ALE’s growing importance, an Atomic Layer Etching Workshop dedicated to this topic will be held on July 1-2 in Portland, Oregon, following ALD 2015. Dr. Eric Hudson will give an invited talk on ALE for self-aligned contacts. We will also share our work on the science and applications of atomic layer etching during the poster session.

Selective Removal of Native SiO2 Using XeF2
A. Hinckley, P. Mancheno (Univ. of Arizona); S. Lai (Lam Research); A. Muscat (Univ. of Arizona)
Wednesday, July 1, 6:00 PM poster session

Overview of Atomic Layer Etching
K.J. Kanarik, T. Lill, E.A. Hudson, S. Sriraman, S. Tan, J. Marks, V. Vahedi, R.A. Gottscho
Wednesday, July 1, 6:00 PM poster session

(Invited) Fluorocarbon-Based Atomic Layer Etching of Silicon Dioxide for Self-Aligned Contact
E.A. Hudson, R. Bhowmick, R. Bise, H. Shin, G. Delgadino, B. Jariwala, D. Lambert, S.J. Cho, S. Deshmukh
Thursday, July 2, 2:20 PM


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