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ALD/ALE 2021 to Showcase Atomic-Scale Processing

June 14, 2021

Chip features continue to shrink to incredibly small dimensions and different device architectures are being devised to supply consumers with more powerful electronics. Atomic layer deposition (ALD) and atomic layer etching (ALE) play key roles in fabricating advanced chips because they can produce features with extraordinary control.  

New developments in these enabling technologies will be the focus of the 21st International Conference on Atomic Layer Deposition (ALD 2021), which takes place June 27-30. The conference also incorporates the 8th International Workshop on Atomic Layer Etching. This year, the event has been adapted into a virtual meeting comprised of live and on-demand sessions.  

To support research and industry learning in these important process areas, Lam is a platinum sponsor of the eventAdditionally, we are sponsoring the Best Student Paper Awards, which recognize outstanding graduate student research in the field. Results from some of our recent work will be shared by Lam experts and our collaborators at this event, as listed below. 

Using Selective Surface Functionalization of SiNx to Increase SiO2 to SiNx ALE Selectivity
R. Gasvoda, Xue Wang, Colorado School of Mines; Prabhat Kumar, Zhonghao Zhang, Eric A. Hudson, Lam Research; Sumit Agarwal, Colorado School of Mines
Tuesday, June 29, 10:10 AM 

The Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition
Marc Merkx, Athanasios Angelidis, Jun Li, Eindhoven University of Technology; Dennis Hausmann, Lam Research; Erwin Kessels, Eindhoven University of Technology; Tania Sandoval, Universidad Técnica Federico Santa Mariá; Adrie Mackus, Eindhoven University of Technology
Wednesday, June 30, 10:10 AM

(Invited) Patterning High Density STT-MRAM with a Novel Atomic Layer Etch Process
Samantha Tan, Wenbing Yang, Tamal Mukherjee, Ziad El Otell, Yiwen Fan, Ran Lin, Seokmin Yun, Keren Kanarik, Thorsten Lill, Yang Pan, Richard A. Gottscho, Lam Research
Wednesday, June 30, 12:00 noon 

Area-Selective Atomic Layer Deposition of Al2O3 on SiO2 Vapor-Functionalized with Small-Molecule Aminosilanes
Wanxing Xu, Colorado School of Mines; Paul C. Lemaire‚ Kashish Sharma‚ Dennis M. Hausmann, Lam Research; Sumit Agarwal, Colorado School of Mines
On-demand session

Understanding the Influence of Plasma-Enhanced Atomic Layer Deposition of SiN on GeSbTe
Hamid Razavi, University of California‚ Los Angeles; Meihua Shen‚ John Hoang‚ Thorsten Lill, Lam Research; Jane P. Chang, University of California‚ Los Angeles
On-demand session

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