ALD/ALE 2017 to Showcase Advances in Atomic-Scale Processing

July 10, 2017

The demands of our modern world for more connectivity, functionality, and capacity from our electronic devices – alongside the seemingly endless imagination for new applications – are pushing the limits of leading-edge chipmaking. Atomic-scale control is needed to create the increasingly small and complex structures involved in many new chip designs. Their manufacture requires capabilities like atomic layer deposition (ALD) and atomic layer etching (ALE), so continued research on these enabling technologies is essential. To that end, the AVS 17th International Conference on Atomic Layer Deposition (ALD 2017) – one of the world’s foremost events exploring developments in ALD – will be held July 15-18 in Denver, Colorado. The 4th International Atomic Layer Etching Workshop (ALE 2017) will run in parallel, facilitating greater mutual understanding of these synergistic technologies that play a key role in advanced chipmaking.

To support research and industry learning in these important process areas, Lam is a platinum sponsor of both the ALD 2017 conference and the ALE 2017 workshop. We are also sponsoring the ALD Best Student Paper Award, which recognizes outstanding graduate student research in the field. In addition, we are involved in ongoing collaborative ALD/ALE research with top universities around the world and industry leaders who have expertise that complements our core strengths. We study process mechanisms, explore tuning and control technologies, and develop new materials and capabilities. Results from some of this work will be shared by Lam experts and our collaborators at this event, as listed below.


ALD 2017 Conference

(Invited) Atomic Layer Deposition of Silicon Dielectrics: Precursors, Processes, and Plasmas
Dennis Hausmann (Lam Research)
Sunday, July 16, 1:30 PM

Evaluation of Silicon Precursors for Low-Temperature Silicon Nitride Deposition
Shuang Meng, B. Hendrix, T. Baum (Entegris Inc.); D. Hausmann (Lam Research)
Sunday, July 16, 2:15 PM

Surface Reactions During Three‐Step ALD of SiCxNy Using Si2Cl6, CH3NH2, and N2 Plasma
Rafaiel Ovanesyan, N. Leick (Colorado School of Mines); K. Kelchner, D. Hausmann (Lam Research); S. Agarwal (Colorado School of Mines)
Monday, July 17, 9:30 AM

Enabling Smooth and Conformal Film Growth via Separate Surface Treatment During Atomic Layer Deposition of Cobalt
Jeong‐Seok Na (Lam Research)
Monday, July 17, 5:30 PM poster session

B2O3 ALD for Advanced Doping Applications: The Roles of Free Radical Precursors and Surface Composition
A.Pilli, J. Jones, Jeffry Kelber (Univ. of North Texas); F. Pasquale, A. LaVoie (Lam Research)
Monday, July 17, 5:30 PM poster session

Electroless Noble Metal Deposition – A New Approach for Highly Selective Surface-Controlled Deposition Process
Stanko Brankovic, D. Solanki, D. Wu (Univ. of Houston); Y. Dordi, A. Joi (Lam Research)
Monday, July 17, 5:30 PM poster session

Tuning Material Properties by Ion Energy Control During Remote Plasma ALD on Planar and 3D Substrates
Tahsin Faraz (Eindhoven Univ. of Technology); H. Knoops (Oxford Instruments); M. Verheijen, C. van Helvoirt, S. Karwal, A. Sharma (Eindhoven Univ. of Technology); D. Hausmann, J. Henri (Lam Research); A. Bol, M. Creatore, W.M.M. Kessels (Eindhoven Univ. of Technology)
Tuesday, July 18, 8:00 AM

Thin Film Dopant Sources Grown by PALD for Shallow Semiconductor Doping
Bodo Kalkofen, M. Silinskas (Otto von Guericke Univ.); M. Lisker (IHP GmbH, Leibniz‐Institut für Innovative Mikroelektronik); Y.S. Kim (Lam Research)
Tuesday, July 18, 2:00 PM


ALE Workshop 2017

Simulation of New Material Systems for Directional Atomic Layer Etching
Ivan Berry, K.J. Kanarik, T. Lill, V. Vahedi, R. Gottscho (Lam Research)
Saturday, July 15, 6:00 PM poster session

(Plenary) Atomic Layer Etching – An Overview of Possibilities and Limitations
Richard Gottscho (Lam Research)
Sunday, July 16, 10:45 AM

(Invited) Determining the Benefits and Limitations of Atomic Layer Etching: A Modeling Investigation
C. Huard (Univ. of Michigan); Y.Zhang, S. Sriraman, A. Paterson (Lam Research); Mark Kushner (Univ. of Michigan)
Sunday, July 16, 3:00 PM

An in situ Optical Diagnostic Study of the Process Conditions That Affect the Etch per Cycle in ALE of SiO2
S. Agarwal, Ryan Gasvoda (Eindhoven Univ. of Technology); N. Leick (Colorado School of Mines); A. van de Steeg (Eindhoven Univ. of Technology); R. Ovanesyan, J. Klein (Colorado School of Mines); R. Bhowmick, E. Hudson (Lam Research)
Monday, July 17, 2:00 PM


Complete schedules and registration information can be found on the ALD 2017/ALE 2017 website.


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